充電MOS是一種可以廣泛使用在模擬電路與數(shù)字電路的場(chǎng)效應(yīng)晶體管。依照其通道的極性不同,可分為N型與P型的MOSFET
型號(hào) | 極性 | VCEO(V) | IC(mA) | hFE(V) | 等效產(chǎn)品 | 封裝形式 | 備注 | |
Min | Max | |||||||
CJ5853DC | P-ch MOS | -20 | -2700 | – | – | CJ2301 | DFN3×2-8L-B | 展訊平臺(tái)???? |
Diode? | 20? | 4000? | MBR0520 | |||||
CJLJF3117P | P-ch MOS? | -20? | -3300? | – | – | CJ2301 | DFNWB2×2-6L-A(P0.65/0.75/0.85) | |
Diode? | 30? | 2000? | RB551V-30 | |||||
CJMNT32?? | PNP+N-ch | -32?? | -1500 | 100 | 300 | CJ818C | DFNWB2×2-6L-U | MTK平臺(tái)?? |
2SK3541 | ||||||||
CJMNT31?? | PNP+N-ch | -30 | -3000 | 100 | 300 | CJ818C | DFNWB2×2-6L-I | |
2SK3541 |